铝薄膜CMP影响因素分析  

Influencing Factory Analysis of Al Thin Film CMP

作　　者：袁育杰[1] 刘玉岭[1] 张远祥[1] 程东升[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《微纳电子技术》2006年第2期107-111,共5页Micronanoelectronic Technology

基　　金：天津市重点自然科学基金(043801211)

摘　　要：提出了在碱性抛光液中铝薄膜化学机械抛光的机理模型,对抛光液的pH值、磨料、氧化剂浓度对过程参数的影响做了一些试验分析。试验结果表面粗糙度的铝薄膜所需的最优化CMP过程参数:硅溶胶粒径为15～20nm,pH值为10.8～11.2,氧化剂浓度为2.5%～3%。A model for Al thin film CMP in alkaline polish slurry was introduced. Experimental analysis was performed concerning the influence of process parameters, such as the slurry pH value, the abrasive, the oxidant concentration. Based on the results of the experiments, the optimum conditions of the CMP process parameters for obtaining the planarized Al thin film with satisfactory surface roughness were investigated as follows： the silicon sol diameter was 15-20nm, the pH value was 10.8-11.2, the oxidant concentration was 2.5%-3%.

关 键 词：化学机械抛光 铝薄膜 全局平面化 

分 类 号：TN305.2[电子电信—物理电子学]