InGaAs/InAlAs多量子阱结构的量子限制Stark效应研究  

STUDY ON THE QUANTUM CONFINED STARK EFFECT OF InGaAs/InAlAs MULTIPLE QUANTUM WELL STRUCTURES

作　　者：俞谦[1] 王健华[1] 李德杰[1] 王玉田[2] 庄岩[2] 姜炜[3] 黄绮[3] 周钧铭[3] 

机构地区：[1]清华大学电子工程系集成光电子学国家重点实验室,北京100084 [2]中国科学院半导体研究所国家光电子工艺中心,北京100083 [3]中国科学院物理研究所,北京100080

出　　处：《物理学报》1996年第2期274-282,共9页Acta Physica Sinica

基　　金：国家自然科学基金资助的课题

摘　　要：通过吸收光电流谱的测量.观察到用国产MBE设备生长的与InP衬底晶格匹配的In-GaAs/InAlAs多量子阱结构的量子限制Stark效应及其与光偏振方向有关的各向异性电吸收特性.报道了可用于波导型调制器制作的MQW样品材料的X射线双晶衍射结果,并用计算机模拟出与实测十分相似的曲线,得到了可靠的量子阱结构参数,证明样品材料具有优良的外延质量.利用等效无限深阱模型进行的理论计算表明,应考虑样品p-i-n结内建电场的影响,才能使算出的吸收边红移与实验值符合.The quantum confined stark effect of InGaAs/InAlAs MQW heterostructures lattice-matched to InP substrate, grown by Chinese-built molecular beam epitaxy (MBE) system, is observed by absorption photocurrent spectra measurements, as well as the anisotropic elec-troabsorption of MQWs. The structure parameters of the epitaxied materials, which can be used to fabricate waveguide MQW electroabsorption modulators, were determined from double crystal X-ray diffraction measurements and computer simulations. The theoretical calculations of absorption-edge red shift compared with experimental results shows that the built-in-potential of the p-i-n junction can not be neglected.

关 键 词：INGAAS 多量子阱 量子尺寸效应 

分 类 号：TN304.26[电子电信—物理电子学] O471.1[理学—半导体物理]