过渡族金属掺杂ZnO薄膜的晶体结构和磁性能  

Crystal Structure and Magnetic Properties of Transition-metal-doped ZnO Films

作　　者：方东明[1] 周勇[1] 赵小林[1] 

机构地区：[1]上海交通大学微纳米科学技术研究院薄膜与微细技术教育部重点实验室,上海200030

出　　处：《磁性材料及器件》2006年第1期19-22,35,共5页Journal of Magnetic Materials and Devices

基　　金：教育部科学技术研究重大项目(0307)

摘　　要：采用电子束蒸发法制备了过渡族金属(Fe、Co、Cu)掺杂ZnO薄膜。分析和研究了衬底温度以及Cu掺杂量对薄膜相结构的影响,获得沿c轴高度择尤取向的高质量ZnO薄膜。采用原子力显微镜(AFM)观察薄膜的显微结构,利用所得的图象信息对薄膜进行分析,发现400℃的衬底温度对硅衬底薄膜是合适的,与XRD分析相吻合。通过对薄膜磁性能的分析和研究,得出一些有意义的结果:适量Fe、Co离子掺杂的ZnO薄膜,在室温下具有铁磁性,而在此基础上掺入少量的Cu离子能改善薄膜的磁性能。Transition-metal（Fe,Co,Cu）-doped ZnO films were fabricated by using e-beam evaporation method. We have analysed and discussed the phase structures under different conditions such as substrate temperatures and Cu contents, and we got highly c-axis oriented ZnO films. The microstructures of the films were observed by AFM. It was found that 400℃ is an ideal silicon substrates temperature, which conforms to the analysis of XRD. By analyzing the magnetism of ZnO films, we found that the films appropriately doped with Fe, Co ions have ferromagnetism at room temperature and their ferromagnetism can be improved by doping a few Cu ions.

关 键 词：ZNO薄膜 掺杂 电子束蒸发 结构 磁性能 

分 类 号：O484.43[理学—固体物理]