消除边缘区效应的“三脉冲DLTS”法及对DX-中心俘获过程的测量  

Three Pulse DLTS Method Proposed to Eliminate the Edge Region Effect and its Applications to the Measurements of DX-Centers Capture Barriers of

作　　者：谢茂海[1] 高季林[1] 葛惟锟[1] 周洁[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1990年第1期1-6,共6页半导体学报（英文版）

摘　　要：本文提出了一种新的方法──“三脉冲DLTS”法,用于测量深能级的热俘获截面,目的在于消除使测量产生很大误差的边缘区效应的影响,最后用这种方法,对AlGaAs:Si中DX—中心的电子热俘获截面进行了测量,结合考虑大的深能级浓度这一因素,通过计算机的拟合过程,给出了非常令人满意的结果。The authors developed a new method-Three Pulse DLTS method-for the measurementof the capture cross-section of deep levels. The effect of edge region can be eliminatedWe have also meaured the capture cross-section of the DX-center in Al_x Ca_(1-x)As:Si sampleswith different Al mole fraction x by the method and have got some satisfied results aidedby computer regression process in which,the high concentrations of deep center have beentaken into account.

关 键 词：深能级 DX-中心 半导体 俘获过程 

分 类 号：O471.5[理学—半导体物理]