全耗尽SOI　MOSFET的阈电压的解析模型  

An Analytic Threshold Voltage Model for Fully Depleted SOI MOSFET

作　　者：付军[1] 田立林[1] 钱佩信[1] 罗台秦[1] 

机构地区：[1]清华大学微电子学研究所,香港科技大学电机电子工程系

出　　处：《电子学报》1996年第5期48-52,共5页Acta Electronica Sinica

基　　金：国家基础性研究重大关键项目计划(攀登计划)研究课题

摘　　要：本文在近似求解全耗尽ＳＯＩＭＯＳＦＥＴ所满足的二维泊松方程的基础上，建立了阈电压的解析模型。通过与ＰＩＳＣＥＳ的模拟结果以及相应的实验数据的比较，证明本模型的误差较小。此外，本模型还具有计算简便、快速，形式直观，物理意义明确等优点。本模型的建立对于全耗尽ＳＯＩＭＯＳＦＥＴ电路模拟、器件物理特性研究及相关的工艺设计是很有意义的。An analytic threshold-voltage model has been established based on the approximate solution of the 2D Poisson' s equation for the fully-depleted SOI MOSFET. The accuracy of the model is verified by comparison with the simulation results of PISCES and the corresponding experimental data. The model has also such advantages as simple and quick calculation, analytic expression and explicit physical meaning. The establishment of the model is helpful to circuit simulation, study of device physical characteristics and the corresponding process design for the fullydepleted SOI MOSFET.

关 键 词：全耗尽 SOI MOSFET 阈电压 场效应器件 

分 类 号：TN386.1[电子电信—物理电子学]