双层InGaAs沟道InP HEMT  

Double InGaAs Channel HEMT on InP

作　　者：尹军舰[1] 陈立强[1] 汪宁[1] 张海英[1] 刘训春[1] 牛洁斌[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2006年第1期15-17,共3页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60276021);国家重点基础研究规划资助(G2002CB311901)

摘　　要：阐述了一种新型的In0.80Ga0.20As/In0.53Ga0.47As双沟道InPHEMT结构。采用这种双沟道结构能够有效地提高沟道中电子的迁移率,减小碰撞电离对HEMT性能的影响;从而既显著提高了HEMT的截止频率,又可获得很高的直流输出电流。0.35μm栅长HEMT器件的电流增益截止频率达到120GHz,饱和电流密度、跨导达到790mA/mm、1050mS/mm,栅极击穿电压和通态击穿电压分别为5V和3.2V。This paper reports a new InP-based HEMT structure with double channel, which consists of In0.80Ga0.20As and In0.53 Ga0.47 As. This structure can availably improve the mobility of electrons in the channels and also reduce impact ionization effects on the performance of InP HEMT. So the cut-off frequency and DC output current of HEMTs can be improved by this structure, The HEMTs with 0. 35μm gate-length achieve a high current cut-off frequency of 120 GHz , and a high saturation current density of 790 mA/mm, a maximum transconductance of 1 050 mS/mm. These devices also get a gate-to-drain （onstate） breakdown voltage of 5 V （3.2 V）.

关 键 词：HEMT IhP 双沟道 迁移率 

分 类 号：TN386[电子电信—物理电子学]