VDMOS场效应晶体管的研究与进展  

Research and Progress of VDMOS Field-Effect Transistor

作　　者：陈龙[1] 沈克强[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《电子器件》2006年第1期290-295,共6页Chinese Journal of Electron Devices

摘　　要：介绍了新一代电力电子器件VDMOS的发展概况及工作原理,分析了其技术特点与优势,重点阐述了近年来国际上VDMOS在高压大电流及低压大电流方面所取得的理论及技术突破,通过不断改进的沟槽技术以及封装工艺提高了器件的整体性能,而Superjunction新结构、SiC新材料的采用突破了Si的高压应用理论极限。最后对未来的研究方向作了展望。The general situation and working principle of VDMOS Field-Effect Transistor are introducedThe features and advantages of this new generation of power electronics devices are presented. The theory and technology breakthroughs of the VDMOS Field-Effect Transistor in recent years are concluded, which focus on low voltage and high voltage power MOSFETs. The excellent performance is realized by the advanced trench and package technology, and the limit line of silicon for high voltage have been broken through the using of a new structure named Superjunction and a new SiC material. In the end, the VDMOS development and prospect are explored.

关 键 词：VDMOS 特征导通电阻 沟槽结构 Supexjumction 

分 类 号：TN432[电子电信—微电子学与固体电子学]