p型氮化镓的低温生长及发光二极管器件的研究  

Growth of p-GaN at low temperature and its properties as light emitting diodes

作　　者：刘乃鑫[1] 王怀兵[1] 刘建平[1] 牛南辉[1] 韩军[1] 沈光地[1] 

机构地区：[1]北京工业大学北京市光电子技术实验室,北京100022

出　　处：《物理学报》2006年第3期1424-1429,共6页Acta Physica Sinica

基　　金：北京市自然科学基金(批准号:D0404003040221);北京工业大学博士科研启动基金(批准号:52002014200403)资助的课题.~~

摘　　要：采用金属有机物化学气相淀积技术(MOCVD)在蓝宝石衬底上低温(870—980℃)生长p型氮化镓(p-GaN).用Hall测试仪测量材料的电学性能,发现当温度低于900℃时,材料的电阻率较高;在900—980℃均可获得导电性能良好的p-GaN.另外,电导性能除与掺杂浓度有关,还与p-GaN生长条件有关,氮镓摩尔比过低导电性能就较差,过高则会引起表面粗糙.采用优化后的p-GaN制作了绿光发光二极管器件,发现生长温度越低器件发光强度越高,反向电压也越高,但正向电压只是略有升高.The p-type GaN（p-GaN） samples grown at low temperature 870--980℃ on sapphire substrate were prepared by the metal organic chemical vapor deposition technique（MOCVD）, and their electrical properties were investigated. The p-GaN samples grown below 900℃ show high-resistivity, and samples grown at above 900℃ have good conductivity. In addition, the electrical properties are also related with the doping level and the growth condition of p-GaN. The low N-Ga mole ratio leads to poor conductivity, the high ratio leads to rough morphology. At last, we use the optimized p-GaN to fabricate the green-light emitting diodes. We found that when the growth temperature is lower, the luminescence intensity and reverse voltage is higher but the forward voltage increases slightly.

关 键 词：Ⅲ-Ⅴ族半导体 氮化镓 发光二极管 金属有机物化学气相淀积 

分 类 号：TN312.8[电子电信—物理电子学]