GaAs　MESFET中肖特基势垒接触退化机理的研究  

Degradation Mechanism of Schottky Contact in GaAs MESFET

作　　者：李志国[1] 赵瑞东[1] 孙英华[1] 吉元[1] 程尧海[1] 郭伟玲[1] 王重 李学信[1] 

机构地区：[1]北京工业大学电子工程系

出　　处：《Journal of Semiconductors》1996年第1期65-70,共6页半导体学报（英文版）

摘　　要：本文对Ｔｉ／Ｍｏ／Ｔｉ／Ａｕ作为栅金属的ＧａＡｓＭＥＳＦＥＴ进行了四种不同的应力试验：１．高温反偏（ＨＴＲＢ）；２．高压反偏（ＨＲＢ）；３．高温正向大电流（ＨＦＧＣ）；４．高温存贮（ＨＴＳ）．通过ＨＲＢ，ΦＢ从０．６４ｅＶ减少到０．６２ｅＶ，理想因子ｎ略有增大．ＨＴＳ试验中ΦＢ从０．６７ｅＶ增加到０．６９ｅＶ．分析表明，这归因于界面氧化层的消失，以及Ｔｉ与ＧａＡｓ的反应；ＨＦＧＣ试验结果表明其主要的失效模式为烧毁，ＳＥＭ观察中有电徙动及断栅现象发生．ＡＥＳ分析表明。应力试验后的样品，肖特基势垒接触界面模糊，有明显的互扩散和反应发生．Abstract The Ti/Mo/Ti/Au Schottky barrier contact in GaAs MESFETs has been investigated by means of: (1) High Reverse Biased test(HRB), (2) High Temperature Reverse Biased (HTRB), (3) High Temperature Forword Gate Current (HFGC) and (4) High Temperature Storage (HTS). The barrier height ΦB decreases from 0. 64 to 0. 62eV in HRB, but in HTS test , the ΦB increases from 0. 67 to 0. 69eV due to the disappearance of the interface oxide layer and interaction of Ti to GaAs. The HFGC test shows that, the main failure mode is burnout, and the SEM analysis shows that electromigration and ungated phenomena happened simultaneously. The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.

关 键 词：MESFET 砷化镓 肖特基势垒 退化 场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]