GaN HEMT外延材料欧姆接触的研究  

Study of Ohmic Contact to GaN HEMT Epilayers

作　　者：刘岳巍[1] 杨瑞霞[1] 武一宾[2] 陈昊[2] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《河北工业大学学报》2006年第2期52-55,共4页Journal of Hebei University of Technology

基　　金：河北省自然科学基金(F2004000078)

摘　　要：研究了Ti/Al/Ni/Au多层金属与GaNHEMT结构外延片的欧姆接触,发现接触特性与金属蒸发后的退火温度密切相关.在氮气氛中880℃条件下快速热退火30s,获得了为6.94×10-7·cm2的比接触电阻.光学显微镜观察表明,在这个条件下退火后金属层具有良好的表面形貌.In this work we studied the ohmic contact of Ti/Al/Ni/Au to GaN HEMT epilayers, and found that the annealing temperature greatly influenced the characteristics of the contact. The specific contact resistance ρc of6.94× 10^-7Ω· cm^2 were obtained after rapid thermal annealing at 880℃ for 30s in N2.Using the optical microscope,we observed that after annealing the surface morphology of the samples were well.

关 键 词：GAN HEMT 欧姆接触 比接触电阻 光学显微镜 

分 类 号：TN304[电子电信—物理电子学]