微圆盘电极技术测定表面化学微加工时的约束刻蚀剂浓度分布  

Concentration Protile of Etchant Measured by Microelectrode Technique in the Process of Chemical Micromachining

作　　者：汤儆[1] 马信洲[1] 何辉忠[1] 张力[1] 林密旋[1] 曲东升[2] 丁庆勇[2] 孙立宁[2] 

机构地区：[1]厦门大学化学化工学院化学系,福建厦门361005 [2]哈尔滨工业大学机器人研究所,哈尔滨150001

出　　处：《物理化学学报》2006年第4期507-512,共6页Acta Physico-Chimica Sinica

基　　金：国家高新技术发展规划(863项目)(2002AA404170);福建省自然科学基金计划资助项目(E0520001)

摘　　要：利用微圆盘电极技术,测定了KBr、L-胱氨酸和硫酸组成的刻蚀溶液体系中Pt电极表面电化学氧化产生的刻蚀剂Br2浓度分布,为约束刻蚀剂层技术(CELT)中刻蚀体系的选择和优化提供更直观的依据.GaAs表面CELT微加工实验证明了用微圆盘电极测得的表面刻蚀剂的浓度分布趋势与微加工实验所得到的结果一致.A carbon-disk microelectrode was used to investigate the surface concentration profile of etchant Br2, which was electrogenerated on the Pt working electrode. The steady state reducing currents of Br2 at different distances away from the Pt electode was measured. The concentration profile was estimated from the current-distance variation curves as a function of different sampling times. Experimentally determined concentration profiles are in good agreement with those estimated from the microetching results. The microelectrode technique has offered a good method to choose suitable etching solution for chemical micromachining.

关 键 词：约束刻蚀剂层技术 微圆盘电极 L-胱氨酸 GAAS 浓度分布 

分 类 号：TG662[金属学及工艺—金属切削加工及机床]