分子束外延生长GaAs中δ掺杂研究  

DELTA-DOPING STUDY IN MBE-GROWN GaAs

作　　者：钟战天[1,2] 吴冰清[1,2] 曹作萍 朱文珍[1,2] 张广泽 王佑祥[1,2] 陈新 张立宝[1,2] 朱勤生[1,2] 邢益荣 

机构地区：[1]中国科学院半导体研究所,北京100083 [2]中国科学院表面物理实验室,北京100080

出　　处：《真空科学与技术》1996年第6期383-387,共5页Vacuum Science and Technology

基　　金：国家自然科学基金

摘　　要：利用二次离子质谱（SIMS）和电化学剖面C－V方法研究了生长温度对GaAs中理想Siδ掺杂结构的偏离和掺杂原子电激活效率的影响。实验发现，外延生长Siδ掺杂GaAs时，随着生长温度的升高，Si掺杂分布SIMS峰非对称展宽，表面分凝作用加强，但不影响Si原子的扩散。另外，Si施主电激活效率随着生长温度的提高而增大。We have investigated the influence of growth temperature on the departures from the ideal Si δ-doping structures and on the activation efficiency of the dopant atoms using secondary-ion mass spectrometry(SIMS) and an electrochemical profiling C-V method (Polaron). Our results for Si δ-doped GaAs indicate that all the Si peaks of SIMS depth profile show asymmetric broadening and surface segregation increases with growth temperature,however,which are not influencing the diffusion of Si atoms. It has been shown that the activation efficiency of the Si donor increases with growth temperature.

关 键 词：分子束外延 Δ掺杂 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学] TN305.3