Performance of an InP DHBT Grown by MBE  

MBE生长的InP DHBT的性能(英文)

作　　者：苏树兵[1] 刘新宇[1] 徐安怀[2] 于进勇[1] 齐鸣[2] 刘训春[1] 王润梅[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《Journal of Semiconductors》2006年第5期792-795,共4页半导体学报（英文版）

摘　　要：We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor （DHBT） produced in China. The device has a 2μm × 12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0. 16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V. The HBT exhibits good microwave performance with a current gain cutoff fre- quency of 80GHz and a maximum oscillation frequency of 40GHz. These results indicate that this InP/InGaAs DHBT is suitable for low-voltage, low-power, and high-frequency applications.报道了一种自对准InP/InGaAs双异质结双极晶体管的器件性能.成功制作了U型发射极尺寸为2μm×12μm的器件,其峰值共射直流增益超过300,残余电压约为0·16V,膝点电压仅为0·6V,而击穿电压约为6V.器件的截至频率达到80GHz ,最大震荡频率为40GHz .这些特性使此类器件更适合于低压、低功耗及高频方面的应用.

关 键 词：MBE Be-doped InGaAs base INP double heterojunction bipolar transistor 

分 类 号：TN322.8[电子电信—物理电子学]