基于Sn/Bi合金的低温气密性封装工艺研究  

Low temperature hermetic bonding process based on electrodeposited Sn/Bi alloy

作　　者：张东梅[1] 丁桂甫[1] 汪红[1] 姜政[1] 姚锦元[1] 

机构地区：[1]上海交通大学微纳科学技术研究院微米/纳米加工技术国家重点实验室薄膜与微细技术教育部重点实验室,上海200030

出　　处：《功能材料与器件学报》2006年第3期211-214,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金项目(No.10377009);电科院预研课题(No.41308050116)

摘　　要：研究了采用Sn/B i合金作为中间层的键合封装技术。通过电镀的方法在基片上形成Cr/N i/Cu/Sn、芯片上形成Cr/N i/Cu/B i多金属层,在513K、150Pa的真空环境中进行共晶键合,键合过程不需使用助焊剂,避免了助焊剂对微器件的污染。实验表明:这种键合工艺具有较好的气密性,键合区合金层分布均匀,无缝隙、气泡等缺陷,键合强度较高,能够满足电子元器件和微机电系统(MEMS)可动部件低温气密性封装的要求。A lead -free bonding technique using Sn/Bi alloy as joint was studied. Cr/Ni/Cu/Sn multi- layer was electroplated on substrate and Cr/Ni/Cu/Bi was electroplated on chip, then these two were bonded at 240℃ in vacuum. This fluxless bonding process can prevent micro device being polluted. The thickness of the joint is uniform along the entire cross section. The strength of the joint is high. This process can make a very hermetic bonding, so it is suitable for hermetic packaging of electronic device and MEMS movable parts at low temperature.

关 键 词：微机电系统 气密性封装 低温键合 

分 类 号：TN405[电子电信—微电子学与固体电子学]