PSJ高压器件的优化设计  

Optimum Design of PSJ for High-Voltage Devices

作　　者：陈万军[1] 张波 李肇基[1] 邓小川[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《Journal of Semiconductors》2006年第6期1089-1093,共5页半导体学报（英文版）

基　　金：国家自然科学基金重点项目(批准号:60436030);国家自然科学基金(批准号:60576052);国防预研基金(批准号:51408060904DZ0211)资助项目~~

摘　　要：基于Semi SJ(superjunction)结构,提出了SJ的比例可以从0～1渐变的PSJ(partialsuperjunction)高压器件的概念.通过对PSJ比导通电阻的分析,得到了PSJ高压器件比导通电阻优化设计的理论公式.计算了不同击穿电压的比导通电阻,并与二维器件模拟结果和实验结果相比较.讨论了BAL(bottomassistlayer)部分穿通因素η、p型区深度归一化参数r、p型区深宽比A以及PSJ漂移区掺杂浓度是否统一对PSJ高压器件比导通电阻的影响.其理论结果和器件模拟结果相吻合,为设计与优化PSJ高压器件提供了理论依据.PSJ结构特别适于制造工艺水平不高、很难实现大的p型区深宽比的情况,为现有工艺实现高压低导通电阻器件提供了一种新的思路.A novel design for a high-voltage PSJ （partial super junction） is proposed. The ratio of the SJ region varies from 0 to 1. Through analysis of the specific on-resistance of the PSI device, a theory of PSJ optimization is developed. Based on this result, the specific on-resistances at different breakdown voltages are calculated and compared with the simulation and experimental results. The influence on the specific on-resistance of the PSJ is discussed in detail,including the punch-through factor of the BAL region η, the normalized depth of p column r, the aspect ratio of p column A ,and the uniformity of the concentration of the SJ region. The theoretical results agree with the simulation. The theory is an academic element for the optimization of PSJS for high-voltage devices.

关 键 词：PARTIAL super JUNCTION RESURF 击穿电压 比导通电阻 

分 类 号：TN386[电子电信—物理电子学]