薄膜全耗尽SOI CMOS电路高温特性模拟和结构优化  

Simulation and Optimization of FD SOI CMOS Devices at High Temperatures

作　　者：刘梦新[1] 高勇[1] 张新[1] 王彩琳[1] 杨媛[1] 

机构地区：[1]西安理工大学自动化学院电子工程系,西安710048

出　　处：《Journal of Semiconductors》2006年第6期1120-1124,共5页半导体学报（英文版）

摘　　要：在300～600K温度范围内,利用ISETCAD模拟软件对全耗尽SOI电路的温度特性进行了模拟分析,得到了较全面的SOICMOS倒相器静态特性和瞬态特性,并提出了一种改进的AlN DSOI结构.结果显示,SOICMOS电路的阈值电压对温度较为敏感,随着温度的升高,输出特性衰退明显.瞬态模拟也表明电路的速度和功耗受外界环境温度的影响较大.改进后的AlN DSOI结构在有效缓解SOI结构热效应和浮体效应的基础上,显著提高了电路的速度和驱动能力.Simulations of fully depleted SOI CMOS devices are carried out using the ISE TCAD DESSIS device simulator in order to predict and analyze temperature effects in a temperature range of 300-600K. Comprehensive static and transient characteristics of SOI CMOS inverters are obtained. Furthermore,a new device structure called AIN-DSOI is proposed. The results indicate that, the threshold voltages of SOI CMOS circuits are sensitive to temperature. A significant reduction in output characteristics occurs as a result of an increase in ambient temperature. In addition, the transient simulations reveal how speed and power depend on ambient temperature. The improved structure has better electrical and driving performance on the basis of releasing the floating body effects and the thermal transfer problem in SOI circuits.

关 键 词：全耗尽 自加热效应 高温 瞬态特性 DSOI 互补金属-氧化物-半导体倒相器 

分 类 号：TN386[电子电信—物理电子学]