一种超深亚微米下IC光刻透射成像的快速算法  

A Fast Algorithm of Imaging for Simulation of Photolithographic Process in VDSM

作　　者：付萍[1] 

机构地区：[1]浙江警官职业学院,浙江杭州310018

出　　处：《微电子学与计算机》2006年第7期137-139,共3页Microelectronics & Computer

基　　金：自然科学基金项目(60176015)

摘　　要：光学邻近效应校正(OPC)是下一代集成电路设计和生产的重要工具。但是在OPC中,为了寻找合适的掩模补偿图形,必须迭代计算大量的空间稀疏分布的试探点成像。在这里提出了一种基于卷积核的快速稀疏空间光强的光刻仿真计算方法。一个双线性光学系统分解成为一组空间域卷积核,并通过对版图的空间域卷积来计算空间光强。与采用Hopkins公式的SPLAT相比,这种方法能快速地计算空间光强。尤其对于大面积计算显得更为有效。Optical proximity correction （OPC） is emerging as an important tool in design and manufacturing of next generation integrated circuits. For practical OPC applications,a fast algorithm of sparse aerial image intensity calculation for lithography simulation is derived in this paper based on the theory of principal waves. Aerial image can be computed fairly fast by this method compared with the rigorous solution of the Hopkins equation, especially for the situation of many sparse aerial points which is often met in OPC application.

关 键 词：超深亚微米 光刻 光学邻近效应 主波 卷积核 

分 类 号：TN305.7[电子电信—物理电子学]