KrF光刻工艺技术  

KrF Photolithography Technology

作　　者：刘德明[1] 王静辉[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2006年第8期569-572,共4页Semiconductor Technology

摘　　要：比较了248nmKrF光刻工艺与i-Line工艺上的异同,利用工艺原理和光学原理分析了248nmKrF光刻工艺的特点。对一些光刻工艺中容易出现的问题进行了探讨,使248nmKrF光刻技术在实际工艺中可以得到灵活应用。Some impact factors in the photolithography process between 248nm KrF and i-line process were compared. The characteristics of 248nm KrF were analyzed by process principle and optical principle. The issues in the photolithography process were discussed, it is important for 248nm KrF technology in actual photolithography process.

关 键 词：光刻 氟化氪 工艺 

分 类 号：TN305.7[电子电信—物理电子学]