蓝宝石衬底AlGaN/GaN HFET功率特性  

Output Power of an AlGaN/GaN HFET on Sapphire Substrate

作　　者：张志国[1] 杨瑞霞[1] 李丽[1] 冯震[2] 王勇[2] 杨克武[1] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《Journal of Semiconductors》2006年第7期1255-1258,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划(批准号:51327030201);国家基础科研基金(批准号:A1120060954)资助项目~~

摘　　要：通过台面隔离与注入隔离结合的方法,解决了由于GaN外延材料缓冲层质量差造成的AlGaN/GaN HFET击穿电压低的问题.通过优化的500℃/50s栅退火条件,改善Ni-AlGaN/GaN二极管特性,理想因子和势垒高度分别优化到1.5和0.87eV.通过改进AlGaN/GaN HFET制备工艺,得到提高器件输出功率的优化工艺,采用这一工艺制备的蓝宝石衬底总栅宽为1mm,器件在频率为8GHz时输出功率达到4.57W,功率附加效率为55.1%.The low breakdown voltage of AlGaN/GaN HFETs,which is caused by the poor buffer layer of GaN epitaxial wafer,is improved through mesa isolation and implantation isolation. Annealing at 500℃ for 50s after the gate metal deposition yields the best performance for an Ni-AlGaN/GaN diode. In particular,the ideality factor and barrier height reach 1.5 and 0. 87eV, respectively. Optimization is achieved by comparing the performance of the gate and output power of AlGaN/GaN HFETs fabricated under different conditions. The output power of a 1mm-gate-wide AlGaN/GaN HFET on sapphire substrate is 4. 57W, with a power added efficiency of 55.1% at 8GHz.

关 键 词：ALGAN/GAN HFET 隔离 整流特性 退火 输出功率 

分 类 号：TN386[电子电信—物理电子学]