一个适用于短沟HALO结构MOS器件的直接隧穿栅电流模型  

A New Direct Tunneling Gate Current Model for Short Channel MOSFETs with HALO Structure

作　　者：赵要[1] 许铭真[1] 谭长华[1] 

机构地区：[1]北京大学微电子学系,北京100871

出　　处：《Journal of Semiconductors》2006年第7期1264-1268,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展计划资助项目(批准号:G2000-036503)~~

摘　　要：对沟道长度从10μm到0.13μm,栅氧化层厚度为2.5nm的HALO结构nMOS器件的直接隧穿栅电流进行了研究,得到了一个适用于短沟道HALO结构MOS器件的直接隧穿栅电流模型.随着沟道尺寸的缩短,源/漏扩展区占据沟道的比例越来越大,源漏扩展区的影响不再可以忽略不计.文中考虑了源/漏扩展区对直接隧穿栅电流的影响,给出了适用于不同HALO掺杂剂量的超薄栅（2～4nm）短沟（0.13～0.25μm）nMOS器件的半经验直接隧穿栅电流模拟表达式.The direct tunneling current of a short channel MOSFET with a HALO structure is investigated, and a new direct tunneling gate current model is obtained. It is found that the extension regions of the gate/source and gate/drain decrease the direct tunneling gate current density because the flat band voltage between the gate/source and gate/drain is higher than that of the substrate. The extension regions reduce direct tunneling current continuously as the channel length decreases. A new direct tunneling gate current model is obtained by comparing the simulation and experimental results. This model is applicable to the devices with an ultra thin gate oxide （2～4nm） ,a short channel （0.13～0.25μm） ,and a HALO structure.

关 键 词：MOS器件 HALO结构 直接隧穿电流 源/漏扩展区 

分 类 号：TN386[电子电信—物理电子学]