基于SOI结构的SiGe HBT频率特性研究  

A Study on Frequency Performance of SiGe HBT Based on SOI Structure

作　　者：戴广豪[1] 李文杰[1] 王生荣[1] 李竞春[1] 杨谟华[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《微电子学》2006年第4期389-391,共3页Microelectronics

摘　　要：基于SOI技术原理,模拟仿真了SOI结构SiGe HBT的频率特性,并与相同条件下体SiGe HBT频率特性进行了比较分析。仿真结果显示,SOI结构中埋氧层BOX的引入,可使SOI结构SiGe HBT集电极-基极电容Ccb和衬底-基极电容Csb最大降幅分别达94.7%和94.6%,且最高振荡频率fmax增加2.7倍。研究结果表明,SOI结构大幅度改善了SiGe HBT的频率性能,适用于高速、高功率集成电路技术。Based on the theory of SOl technology, the frequency performance of SiGe HBT＇s with SOI structure is simulated. Compared with the bulk SiGe HBT, simulation results show that the buried oxide layer, BOX, can reduce the collector-base capacitance Cab and the substrate-base capacitance C, by 94. 7% and 94. 6% in maximum, respectively. And the maximum oscillation frequency is improved by a factor of 2.7. The study demonstrates that SOI structure greatly improves the frequency performance of SiGe HBT＇ s, and so, it is applicable for high-speed and high power IC＇ s.

关 键 词：SOI SIGE 异质结晶体管 频率特性 最高振荡频率 

分 类 号：TN302[电子电信—物理电子学]