GaAs脊形量子线结构的MBE生长机理研究  

MBE Growth Mechanism of GaAs Ridge-QWR Structures On Nonplanar Substrates

作　　者：牛智川[1] 周增圻[1] 林耀望[1] 周帆[1] 潘昆[1] 张子莹[1] 祝亚芹 王守武[1] 

机构地区：[1]中国科学院半导体研究所,国家光电子工艺中心

出　　处：《Journal of Semiconductors》1996年第3期227-230,共4页半导体学报（英文版）

摘　　要：本文报道了非平面衬底上分子束外延生长ＧａＡｓ脊形量子线结构的实验研究．已成功地在ＧａＡｓ（００１）刻蚀条形衬底上生长出了由（１１１）面和（１１３）面构成的两种脊形量子线结构．本文讨论了非平面衬底上ＭＢＥ生长脊形结构的形成机制，认为在一定的生长条件下，脊形结构的表面取向是由两个原始交界面上生长速率的相对差异决定的；而生长速率的差异是由表面再构的不同决定的．Abstract Two kinds of GaAs ridge quantum wire structures have been fabricated,by MBE on GaAs (001) mesa-etched substrates. SEM measurements indicated that the QWRs were formed with (113) and (111) side faces. A simple growth model has been given to discuss the growth mechanism of MBE facet growth. It was found that the orientations of additional side faces were determined by the growth rate ratio of two original cross planes,and the growth rate is determined by the structures of surface reconstructions under certain growth conditions.

关 键 词：砷化镓 脊形量子线结构 MBE生长 

分 类 号：TN304.23[电子电信—物理电子学]