MOCVD制备GaAs/AlGaAs多量子阱的光致发光特性  

PHOTOLUMINESCENCE OF GaAs/AlGaAs MULTIQUANTUM WELLS GROWN BY MOCVD

作　　者：程兴奎[1] 黄柏标[2] 徐现刚[2] 刘士文[2] 任红文[2] 蒋民华[2] 

机构地区：[1]山东大学光电材料与器件研究所 [2]山东大学晶体材料研究所

出　　处：《山东大学学报（自然科学版）》1996年第4期471-475,共5页Journal of Shandong University(Natural Science Edition)

基　　金：国家自然科学基金资助项目

摘　　要：对MOCVD生长的GaAs/A1_xGa_(1-x)As多量子阱结构进行了光致发光特性的测量,结果观察到三个发光峰:位于1.664eV处的峰是自由激子发光;峰值处于1.481eV的发光是GaAs中施主Si(Ga)原子上的电子向受主Si(As)跃迁引起的;而在1.529eV处的弱发光峰是GaAs阱层中Si(Ga)原子上的电子与价带量子阱中基态重空穴复合形成的。对三种发光峰的能量位置进行了理论计算,其计算结果与实验测量所得到的值符合较好。Photoluminescence of GaAs/AlxGai1-x As multiquantum wells grown by MOCVD was measured. Three luminescence peaks which is at 1. 664eV, 1. 481eV and 1. 529eV, respectively, have been observed. They are attributed to recombination of free exciton, transition of electron from Si(Ga) to Si (As) in GaAs and transition of electron of Si (Ga)in GaAs of well to ground state heavy hole in well in Valence band, respectively. The peak position calculated for above three luminescence are in good agreement with measured results.

关 键 词：MOCVD 多量子阱 光致发光 砷化镓 ALGAAS 

分 类 号：O472.3[理学—半导体物理]