ULSI多层铜布线CMP影响因素分析研究  

Analysis and Study on the Influencing Factors of Copper Interconnection CMP in ULSI

作　　者：刘博[1] 刘玉岭[1] 孙鸣[1] 贾英茜[1] 刘长宇[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《微纳电子技术》2006年第9期442-446,共5页Micronanoelectronic Technology

摘　　要：研究了ULSI多层互连工艺中铜布线的CMP的机理;对影响抛光速率和抛光后表面状态的诸因素,如抛光条件、抛光方式和抛光耗材进行了分析;特别针对抛光液对铜布线CMP的影响,提出了目前存在的主要问题,并对未来的研究方向和研究内容进行了展望。Mechanism of copper interconnection CMP in ULSI was studied. The factors such as polish conditions, methods and consumptions which affected polish speed and surface state were analyzed. Specially aiming at the effect of polish slurry on copper chemical-mechanical polish, the primal problems existed at present were brought forward, and the prospect of research direction and content in future were presented.

关 键 词：甚大规模集成 化学机械抛光 铜布线 抛光液 

分 类 号：TN405.97[电子电信—微电子学与固体电子学] TN305.2