C-V法测量pn结杂质浓度分布的基本原理及应用  

Principle of the C-V Method for Measuring Impurity Distribution in Junction Diodes and Its Application

作　　者：何波[1,2] 史衍丽[2] 徐静[3] 

机构地区：[1]昆明理工大学光电子新材料研究所 [2]昆明物理研究所,云南昆明650223 [3]济南大学材料学院

出　　处：《红外》2006年第10期5-10,共6页Infrared

摘　　要：全面地介绍了pn结C-V测量法的基本原理、测试设备及条件。利用pn结反向偏压时的电容特性推导了有效杂质浓度随深度分布的计算公式及突变结和线性缓变结的1/(C2)-V和1/(C3)-V关系图。应用该原理计算、分析了IN5401整流二极管pn结的特性及杂质浓度的纵向分布。The basic principle, test equipment and test condition of the capacity-voltage method for measuring the impurity distribution in junction diodes are presented completely. The formula for calculating the effective impurity concentration in the abrupt junction, the linearly graded junction and the random junction is deduced by using the capacity characteristics obtained when the reverse bias are applied to the p-n junction. Finally, the impurity concentration distribution in an IN5401 diode is calculated using the method and the characteristics of the p-n junction are analyzed.

关 键 词：C—V测量法 杂质浓度分布 PN结 势垒电容 离子注入 

分 类 号：O474[理学—半导体物理]