基于1.5μm BiCMOS工艺的SiGe HBT器件设计优化  

Design Optimization of SiGe/Si HBT Based on 1.5μm BiCMOS Technology

作　　者：李文杰[1] 戴广豪[1] 谭开洲[2] 王生荣[1] 李竞春[1] 杨谟华[1] 

机构地区：[1]电子科技大学,四川成都610054 [2]模拟集成电路国家重点实验室中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2006年第5期595-597,600,共4页Microelectronics

摘　　要：基于非选择性外延,自对准注入技术,集电区选择性注入和快速热退火工艺,提出了一种适用于1.5μm BiCMOS集成技术的SiGe HBT器件结构。该结构具有内基区薄,外基区厚,B/E结两侧杂质浓度低,发射极/基极自对准诸优点。利用TSuprem4和Medici进行工艺模拟和电学特性仿真。结果表明,所设计的的SiGe HBT具有良好的电学特性,其最大电流增益为210,当Vce=2.5 V时,截止频率达到65 GHz,验证了器件结构设计的合理性。Based on non-selective epitaxy, self-aligned implantation, selectively-implanted collector （SIC）and rapid thermal annealing （RTA）, a SiGe HBT structure with thin internal base, thick external base, low-doped B/E junction and self-aligned emitter/base is presented based on 1.5μm BiCMOS technology. Simulations were made on the proposed SiGe HBT＇s using TSuprem4 and Medici. Results show that a maximum current gain of 210 and a cutoff frequency of 65 GHz have been achieved for the device, which validates the design of the proposed structure.

关 键 词：SIGE HBT BICMOS工艺 快速热退火 自对准工艺 选择性注入 

分 类 号：TN325.3[电子电信—物理电子学]