功率SiGe/Si HBT的温度特性  

Temperature Characteristics of Power Si/SiGe/Si HBT's

作　　者：张万荣 王扬[1] 金冬月[1] 谢红云[1] 肖盈[1] 何莉剑[1] 沙永萍[1] 张蔚[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《微电子学》2006年第5期611-614,共4页Microelectronics

基　　金：国家自然科学基金资助项目(60376033);北京市优秀跨世纪人才基金资助项目(67002013200301);模拟集成电路国家重点实验室基金资助项目(51439010804QT0101);北京市教委项目;北京市属市管高校中青年骨干教师培养计划资助项目

摘　　要：测量了Si／SiGeHBT在23-260℃温度范围内的Gummel图、理想因子n、不同基极电流下的发射结电压VBE、电流增益β、共发射极输出特性，以及Early电压U的变化情况。结果表明，随电流和温度的增加，β减少，％随温度的变化率dVBE／dT小于同质结Si BJT。在高集电极-发射极电压和大电流下，在输出特性曲线上观察到了负微分电阻（NDR）特性。结果还显示，电流增益-Early电压积与温度的倒数（1／T）呈线性关系，这对模拟电路应用是很重要和有用的。Temperature dependence of properties of Si/SiGe/Si HBT＇s, such as the Gummel plots, ideality factors, base-emitter voltage VBE at various base current levels, current gain, common emitter characteristics and Early voltage from 23℃ to 260℃, were measured and analyzed. Our data show that current gain decreases with increasing current and temperature in normal operating ranges, and that the variation of VBE with temperature in SiGe HBT is smaller than that of homojunction silicon BJT. The negative differential resistance （NDR）characteristics of Si/ SiGe/Si HBT at high collector-emitter voltage and high current was observed. It has been shown that the gain-Early voltage product is roughly linear with 1/T above ambient temperature, which is very important and useful for applications of analog ICes.

关 键 词：SIGE/SI 异质结晶体管 温度特性 

分 类 号：TN322.8[电子电信—物理电子学]