超薄基区SiGe HBT基区渡越时间能量传输模型  

Energy Transport Model for Base Transit Time of Ultrathin Base SiGe HBT's

作　　者：蔡瑞仁[1] 李垚[1] 刘嵘侃[2] 

机构地区：[1]中国科学技术大学物理系微电子实验室,安徽合肥230026 [2]模拟集成电路国家重点实验室中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2006年第5期618-621,共4页Microelectronics

摘　　要：通过求解玻尔兹曼能量平衡方程,得出基区的电子温度分布,建立了考虑电子温度变化,适用于超薄基区SiGe HBT的基区渡越时间模型。该模型考虑了电子温度对迁移率的影响,基区重掺杂和Ge引起的禁带变窄效应及速度饱和效应。比较了用能量传模型与漂移扩散模型计算的截止频率,利用器件模拟软件ATLAS进行了模拟,结果与能量传输模型计算结果吻合。By solving Boltzmann energy transport equation, the electron temperature distribution in the base region was obtained, and a model for base transit time of ultra-thin base SiGe HBT＇s was developed with electron temperature distribution taken into consideration. This model takes into account the effect of electron temperature on mobility, bandgap narrowing due to heavy doping in base region and the Ge concentration, and carrier velocity saturation in the BC junction. Comparisons were made on cut-off frequencies between predictions of this model and simulation results from the drift diffusion model to demonstrate the utility and accuracy of the model.

关 键 词：锗硅异质结双极晶体管 超薄基区 能量传输模型 基区渡越时间 速度饱和效应 

分 类 号：TN322.8[电子电信—物理电子学]