具有漂移区场氧化层结构的射频LDMOS器件研究  

A Study on RF LDMOSFET with Field Oxide on Drift Region

作　　者：冯曦[1] 王纪民[1] 刘道广[2] 

机构地区：[1]清华大学微电子研究所,北京100084 [2]模拟集成电路国家重点实验室中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2006年第5期626-629,共4页Microelectronics

摘　　要：介绍了一种改进型RF LDMOS器件。通过对传统RF LDMOS器件的工艺流程进行修改,并在漂移区上方引入场氧化层结构,改善了器件的准饱和现象。当工作在Vgs=5 V,Vds=10 V条件下时,与传统RF LDMOS器件相比,改进后RF LDMOS器件的跨导提高约81%,截止频率提高约89%,击穿电压提高约15%。A novel RF LDMOS is presented. By modifying process for conventional RF LDMOS and introducing field oxide on the drift region, quasi-saturation effect of the device is reduced and performance of the device is greatly improved. Specifically, the transconductance, cut-off frequency and breakdown voltage of the modified RF LDMOS device increase by 81%, 89% and 15%, respectively, at Vgs =5 V and Vds =10 V.

关 键 词：RF LDMOS 准饱和 漂移区 场氧化层 

分 类 号：TN386[电子电信—物理电子学]