实现高温工作的SOI器件埋层结构研究  

Research on SOI buried insulator structure for high temperature operating conditions

作　　者：张新[1] 高勇[1] 刘梦新[1] 安涛[1] 王彩琳[1] 邢昆山 

机构地区：[1]西安理工大学自动化学院,陕西西安710048 [2]华东光电集成器件研究所,安徽蚌埠233042

出　　处：《兵器材料科学与工程》2006年第5期23-27,共5页Ordnance Material Science and Engineering

摘　　要：硅基集成电路不能胜任高温工作环境,其高温工作上限一般为125℃。而基于SOI材料及其结构的器件,能突破高温的限制。介绍了SOI材料结构技术用于高温电路的优势,分析了影响高温性能的自加热效应。为实现良好的高温性能,比较了几种不同的埋层结构,提出了沟道下用氮化铝作埋层的SOI器件新结构,并对其高温输出性能随温度的变化进行了研究分析,得出了具有指导意义的分析结果。同时提出了根据埋层材料的介电常数不同,进行等效电容折算埋层厚度的新观点,从另一层面提出了抑制自加热效应的理论依据。The development for silicon IC using in many high temperature areas is restricted, because its higher limit at hightemperature is 125 ℃. The devices based on SOI material and structure can break out the restrictions. In this paper, the superiority of SOI material and structure for manufacturing high-temperature devices is introduced. High-temperature performance in fluenced by self-heating effectis analyzed. Comparison among the different SOI buffed insulator structure is made. In order to re alize perfect high-temperature performance. A new SOI structure with A1N as a buried insulator under the channel of device is reported, and the high-temperature output characteristics as a function of temperature are analyzed. Furthermore, a new point of view is advanced, that buffed insulator thickness can be reduced to Si02 thickness using method of equivalent capacitance based on different dielectric constant of buffed insulator materials. From another aspect, a new theoretical basis for bringing down self-heating effect is put forward.

关 键 词：SOI 埋层结构 自加热效应 高温特性 

分 类 号：O47[理学—半导体物理]