小尺寸MOSFET隧穿电流解析模型  

Analytic tunneling-current model of small-scale MOSFETs

作　　者：陈卫兵[1] 徐静平[1] 邹晓[1] 李艳萍[1] 许胜国[1] 胡致富[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《物理学报》2006年第10期5036-5040,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60376019);湖北省自然科学基金(批准号:2003ABA087)资助的课题.~~

摘　　要：基于表面势解析模型,通过将多子带等效为单子带,建立了耗尽/反型状态下小尺寸MOSFET直接隧穿栅电流解析模型.模拟结果与自洽解及实验结果均符合较好,表明此模型不仅可用于SiO2、也可用于高介电常数(k)材料作为栅介质以及叠层栅介质结构MOSFET栅极漏电特性的模拟分析,计算时间较自洽解方法大大缩短,适用于MOS器件电路模拟.An analytic model of direct tunneling current of small-scale MOSFETs in depletion and inversion is developed based on analytic surface-potential model and replacing the muhi-subband with a single-subband. The simulated results are in good agreement with the results of self-consistent solution and experimental data, but take much shorter computing time than the self- consistent solution method. This indicates that the model can be used for analysis of gate-leakage properties of MOS devices with not only SiO2 but also high-k materials as gate dielectric and high-k gate dielectric stack structures, and circuit simulation of MOS devices.

关 键 词：隧穿电流 MOSFET 量子机理 解析模型 

分 类 号：O471[理学—半导体物理]