热处理对氮化硅薄膜光学和电学性能的影响  

OPTICAL AND ELECTRICAL PROPERTIES OF ANNEALING SiN_x∶H THIN FILM

作　　者：龚灿锋[1] 席珍强[1] 王晓泉[1] 杨德仁[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《太阳能学报》2006年第3期300-303,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金项目(No.60225010;90307010)

摘　　要：使用PECVD在单晶硅硅片表面沉积了非晶氮化硅(a-SiNx∶H)薄膜,采用传统的退火炉和快速热退火炉进行了不同时间和温度下的退火比较,并研究了退火对薄膜光学性能以及材料少子寿命的影响。研究发现:氮化硅薄膜经热处理后厚度降低,折射率先升高后降低;沉积氮化硅薄膜后400℃退火可以促进氢扩散,提高少子寿命,超过400℃后氢开始逸失,衬底少子寿命急剧下降。另外,还发现RTP处理过程中氢的逸失比常规热处理快。Amorphous silicon-nitride thin films were prepared by plasma enchanced chemical vapor deposltlon（PECVVD） on monocrystalline silicon wafer, the pmperlies of the films was measured after annealing with different time and temperatures. It was found that the thickness deceases with annealing temperature, while the reflective index increased ans then reduces.Annealing at 400℃ can accelerate the hydrogen diffusion and increase the minority-carrier lifetime. However, once the annealing temperature is higher than 400℃, hydrogen atoms diffused out, resulting that the minority-carrier lifetime decreases rapidly. Moreover, the diffusion of hydrogen under RTP is rapider than that under conventional annealing.

关 键 词：氮化硅 热处理 PECVD 

分 类 号：O484.4[理学—固体物理] TM914.42[理学—物理]