用于MEMS的叠层光刻胶牺牲层技术(英文)  

Laminated Photoresist Sacrificial Layer Technology for MEMS

作　　者：张永华[1] 丁桂甫[2] 姜政[2] 蔡炳初[2] 赖宗声[1] 

机构地区：[1]华东师范大学电子科学技术系,上海200062 [2]上海交通大学微纳科学技术研究院,上海200030

出　　处：《传感技术学报》2006年第05A期1422-1425,共4页Chinese Journal of Sensors and Actuators

基　　金：国家高技术研究发展计划资助(2003AA404140);国家信息工业部科学基金资助(41308050116);国家自然科学基金资助(10377009)

摘　　要：研究了用于制备悬空结构的叠层光刻胶牺牲层工艺.讨论了工艺中常遇到的烘胶汽泡、龟裂、起皱、刻蚀电镀种子层时产生的絮状物和悬空结构释放时的粘附等问题,并提出了相应的解决办法.借助于分层刻蚀法和逐步替换法,用叠层光刻胶作牺牲层并利用湿法释放技术,制备得到了长1400μm、厚6μm、宽40μm、悬空高为10μm的完好的悬臂梁结构.Laminated photoresist sacrificial layer process has been developed to fabricate suspended microstructures. Different problems related to the process such as air bubble, crack, crinkle, black floccule and adhesion are discussed and their solutions are proposed. The perfect suspended structure is successfully achieved utilizing wet release technology with in-sequence-removal method for the etching of the laminated photoresist and in-sequence-displacement method forthe release of cantilever beam. The distance is about 10μm from the substrate to the cantilever beam with a length of 1400μm,a thickness of 6μm and a width of 40μm.

关 键 词：MEMS 微结构 光刻胶 牺牲层 

分 类 号：TN43[电子电信—微电子学与固体电子学]