Cr薄膜的沉积与湿法刻蚀工艺研究  

A Study on Cr Thin Films Depositing and its Wet-Etching

作　　者：李兆泽[1] 徐超[2] 吴学忠[1] 万红[2] 李圣怡[1] 

机构地区：[1]国防科技大学机电工程与自动化学院,长沙410073 [2]国防科技大学航天与材料工程学院,长沙410073

出　　处：《传感技术学报》2006年第05A期1437-1440,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然基金项目资助(50375154)

摘　　要：通过台阶仪和扫描电镜、原子力显微镜测试观察了PVD方法制作Cr薄膜的溅射速率和表面形貌,实验分析了相关工艺参数对溅射速率的影响情况,并对薄膜的湿法刻蚀工艺进行了初步研究.同时给出了Cr膜与其腐蚀后的电阻图形的显微镜照片.Cr thin film has been deposited by PVD process. The sputtering rate of Cr thin-film is measured by step Profiler and its surface is observed on SEM and AFM. The influence of some different factors to the sputtering rate is educed based on the experiments. And some Preliminary Studies have been done to the wet-etching of the thin film. At the same time, the microscope picture of the Cr thin film and the resistance of Cr after wet-etching are shown;

关 键 词：PVD 薄膜 湿法刻蚀 台阶仪 扫描电镜 原子力显微镜 

分 类 号：TH18[机械工程—机械制造及自动化]