一种新颖的基于离子束刻蚀的纳米沟道制备技术  

Novel Fabrication Technique for Nanogroove Using Ion Beam Etching

作　　者：史明甫[1] 焦继伟[2] 包晓清[2] 冯飞[2] 杨恒[2] 李铁[2] 王跃林[2] 

机构地区：[1]中国科学院研究生院 [2]上海微系统与信息技术研究所传感器技术联合国家重点实验室

出　　处：《传感技术学报》2006年第05A期1462-1465,共4页Chinese Journal of Sensors and Actuators

基　　金："973"项目资助(2006CB300403)

摘　　要：研究了一种新颖的基于MEMS工艺中离子束刻蚀的纳米沟道制备技术,通过研究离子束刻蚀微米级线条时,离子束刻蚀角度与刻蚀的轮廓形状之间的关系,在2μm线条内刻蚀出纳米沟道所需要的掩模图形,并结合KOH的各向异性腐蚀,成功获得了纳米沟道阵列。在两种不同的离子束刻蚀条件下,在2μm图形内分别制备出单纳米沟道和双纳米沟道,最小宽度可达440nm.We present a novel fabrication technique of nanogroove using conventional ion-beam etching process. The relation between the incident angle of etching ion beam and the obtained profile has been carefully investigated. Starting from 2 μm width features, we formed desired self-aligned nano scale opens by using specially designed ion-beam etching process, and then fabricated the triangular nanogroove arrays with KOH anisotropic etching. In the original 2μm features, single and double nanogroove arrays can be easily achieved, whose width is as small as 440 nm and can be possibly extend to even narrower by precise time controlling.

关 键 词：微/纳机械系统纳米沟道 离子束刻蚀 

分 类 号：TN305.7[电子电信—物理电子学]