SiN_x和SiC材料的红外吸收特性研究  

Infrared Absorbance of SiN_x and SiC

作　　者：王欣[1] 于晓梅[1] 田大宇[1] 

机构地区：[1]北京大学微电子学研究院,北京100871

出　　处：《传感技术学报》2006年第05A期1778-1780,1784,共4页Chinese Journal of Sensors and Actuators

摘　　要：采用LPCVD和PECVD技术制作了不同厚度的SiNx和SiC材料样品,使用傅立叶变换红外光谱仪对其进行了红外吸收特性测试,并通过离子注入的方式对其红外吸收特性进行调节.实验结果表明:LPCVDSiNx材料在8~14μm波段存在吸收峰,而PECVDSiNx和SiC材料在3μm^5μm波段和8~14μm波段存在吸收峰.随着材料厚度的增加,吸收度也增加,1μm厚的LPCVDSiNx,红外吸收度可以达到0.92.离子注入可改变材料的红外吸收能力.LPCVD and PECVD techniques were used to deposit SiNx and SiC thin films. The IR absorbance spectra of the films were acquired by using a Nicolet Magna 750 FTIR. The experiment results show that the LPCVD SiNx had an absorbance peak in the range of 8-14μm, and PECVD SiNx and SiC had two absorbance peaks, which is in the range of 3-5 μm and 8-14μm respectively. The IR absorbance of the films increased as the films thickness increase. The peak absorbance of SiNx film of 1 μm thick can reach 0, 92. Ion implantation technology was also utilized to change the IR absorbance of the materials.

关 键 词：红外 LPCVD PECVD 离子注入 

分 类 号：TN491[电子电信—微电子学与固体电子学]