高k栅介质MOSFETs的二维阈值电压模型  

2D Threshold-Voltage Model for High-k Gate-Dielectric MOSFETs

作　　者：季峰[1] 徐静平[1] Lai P T 陈卫兵[1] 李艳萍[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074 [2]香港大学电机与电子工程系

出　　处：《Journal of Semiconductors》2006年第10期1725-1731,共7页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60376019)~~

摘　　要：给出包括栅电介质与耗尽层区域的边界条件和二维沟道电势分布.根据这个电势分布,得出高k栅介质MOSFET的阈值电压模型,模型中考虑短沟道效应和高k栅介质的边缘场效应.模型模拟结果和实验结果能够很好地符合.通过和一个准二维模型的结果相比较,表明该模型更准确.另外,还详细讨论了影响高k栅电介质MOS-FET阈值电压的一些因素.New boundary conditions and a 2D potential distribution along the channel of a high-k gate-dielectric MOSFET,including both the gate dielectric material region and the depletion region,are given. Based on this distribution,a 2D threshold-voltage model with the fringing-field and short-channel effects is developed for a high-k gate-dielectric MOSFET. The model agrees well with experimental data and a quasi 2D model,and is even more accurate than the quasi 2D model at higher drain voltages. Factors affecting the threshold behavior of the high-k gate-dielectric MOSFET are discussed in detail.

关 键 词：高K栅介质 MOSFET 阈值电压 边缘场 短沟效应 

分 类 号：TN386[电子电信—物理电子学]