GaN基HEMT器件的表面陷阱充电效应研究  

Investigation on Surface Trapping Effects of GaN-Based HEMT

作　　者：罗谦[1] 杜江锋[1] 罗大为[1] 朱磊[1] 龙飞[1] 靳翀[1] 周伟[1] 杨谟华[1] 

机构地区：[1]电子科技大学微电子学与固体电子学学院,成都610054

出　　处：《半导体技术》2006年第11期856-858,867,共4页Semiconductor Technology

基　　金：国家自然科学基金(60076007)

摘　　要：设计了一种实验方法用以研究AlGaN/GaN外延表面陷阱充电效应对于薄膜电阻的影响,该效应与GaN基HEMT电流崩塌现象直接相关。测量获得了AlGaN/GaN异质结结构薄膜电阻在周期栅脉冲信号下的变化规律。薄膜电阻在低频区域对脉冲频率十分敏感,而在高频时出现饱和。当信号频率足够高时(≥4kHz),AlGaN/GaN薄膜将呈现高阻,器件关断,说明二维电子气已被表面陷阱电荷耗尽。该实验为研究表面陷阱与电流崩塌效应的关系提供了新的证据。An experiment was designed to investigate the effects of the surface trapping process on the sheet resistance of the AlGaN/GaN film. The variation of the sheet resistance was measured while periodical square signals were applied on a specially designed AIGaN/GaN HEMT. It is demonstrated that the sheet resistance depends on the signal frequency. While the frequency applied is higher than 4KHz, the sheet resistance becomes very large and the device is cut off. It directly evident that the 2DEG at the AlGaN/GaN interface is depleted by the surface trapped charges. The experiment can be assisted in the further investigation of the role of surface traps in current collapse effect.

关 键 词：氮化镓 表面态 电流崩塌 

分 类 号：TN304.23[电子电信—物理电子学]