注碳外延硅的荧光特性研究  

Photoluminescence of C^+-Implanted Epitaxial Silicon

作　　者：李玉国[1] 孙钦军[1] 曹玉萍[1] 王强[1] 王建波[1] 张秋霞[1] 

机构地区：[1]山东师范大学半导体研究所,山东济南250014

出　　处：《半导体光电》2006年第5期560-562,共3页Semiconductor Optoelectronics

摘　　要：研究了注碳外延硅经氢气退火及电化学腐蚀处理后的荧光特性。经能量为50keV,剂量为2×1016cm-2的碳离子注入后的外延单晶硅片,在氢气氛下高温退火及电化学腐蚀处理。荧光谱仪分析表明电化学腐蚀是蓝光发射的前提,并且不同的电化学腐蚀条件对发光强度和峰位影响极大。不同的激发光波长亦可影响发光谱的峰位。Photoluminescence properties of epitaxial silicon implanted carbon after annealed in hydrogen and anodization are measured. The carbon ions with 50 keV energy, 2 × 10^16 cm^-2 dose were implanted into epitaxial silicon wafer. Then the above samples were annealed in hydrogen and anodized. The results of photoluminescence show that anodization condition is the premise of blue luminescence, at the different condition of which, there will be magnificent transition of the spectra to their height and location. Excitation wavelengths also influence the peak location of the spectra.

关 键 词：离子注入 电化学腐蚀 蓝光发射 发光中心 

分 类 号：TN304.12[电子电信—物理电子学]