128×128GaAs量子阱红外焦平面探测器阵列铟柱制备  

Fabrication of In Bump for 128×128 QW Infrared Photodetector Array

作　　者：杨孟丽[1] 冯震[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2006年第11期512-514,共3页Micronanoelectronic Technology

摘　　要：对量子阱红外探测器研制中通常采用的铟膜制备和铟柱生长技术进行了研究。从铟源的选择及蒸发的方法、距离、真空度的控制等方面做了大量实验,优化出了最佳工艺条件。铟源的纯度99.99%,电子束蒸发厚金属膜,旋转行星夹具,蒸发距离39cm,1.33×10-Pa真空下启动蒸5发程序和关闭高阀,辅以适当的剥离方法,最终在光敏芯片和读出电路上分别制备出符合设计要求的20μm×20μm×7μm(长×宽×高)铟柱。该工艺方法适用于任何厚金属膜的制备。A mass of experiments were carried out, and the selecting the source of indium, evaporation, distance and the control of vacuum degree were considered to optimize the process. The purity of indium source was 99.99%, the thick metal film was formed by electron beam evaporation using revolving planet holding devices, the evaporate distance was 39 era, started up the evaporate program and closed the clique under a high vacuum degree about 1.33×10^-5Pa, and appropriate adjuvant lift-off was employed. Finally, congruent 20μm×20μm×7μm （length×width×height） indium bump was fabricated on light sensitive chip and reading-circuit. This technique is available for any thick metal films.

关 键 词：量子阱红外焦平面探测器 铟柱 电子束蒸发 

分 类 号：TN362[电子电信—物理电子学]