Pt／Ti电极的扩散行为及其对铁电薄膜的影响  

The Diffusion Behavior of Pt/Ti Electrode and Its Effect on Ferroelectric Thin Films

作　　者：屈新萍[1] 丁爱丽[1] 罗维根[1] 仇萍荪[1] 陈先同 

机构地区：[1]中国科学院上海硅酸盐研究所

出　　处：《无机材料学报》1996年第3期499-504,共6页Journal of Inorganic Materials

基　　金："863"新材料专家委员会资助

摘　　要：采用直流磁控溅射方法制备Ｐｔ／Ｔｉ电极，用ＲＢＳ、ＸＲＤ、ＳＥＭ方法研究了Ｐｔ和Ｔｉ的扩散行为，发现在氧气氛中进行热处理造成Ｔｉ层的快速氧化，Ｔｉ厚度对Ｐｔ／Ｔｉ的扩散有很大影响．Ｐｔ／Ｔｉ的扩散造成其上的铁电薄膜较差的显微结构和性能．Pt/Ti electrode was prepared by DC magnetron sputtering. Interdiffusion in the Pt/Ti/SiO2/Si interface was examined as a function of various annealing conditions and substrate heating temperatures by using Rutherford backscattering spectrometry, X-ray diffraction and scanning electronic microscopy. It was found that annealing in O2 atmosphere caused the rapid oxidation of Ti layer. The thickness of Ti layer was very important to the interdiffusion of Pt/Ti electrode. The interdiffusion of Pt/Ti caused the poor microstructure and properties of ferroelectric thin films.

关 键 词：磁控溅射 电极 铁电薄膜 钛 铂 半导体薄膜 

分 类 号：O484.4[理学—固体物理] TN304.907[理学—物理]