检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:王芸[1] 龙沪强[2] 侯中宇[1] 徐东[1] 谢宽仲[3] 蔡炳初[1] 卞建江[3]
机构地区:[1]上海交通大学微纳科学技术研究院微米/纳米加工技术国家重点实验室薄膜与微细技术教育部重点实验室,上海200030 [2]上海交通大学电子信息与电气工程学院,上海200030 [3]上海大学材料科学与材料工程学院,上海200072
出 处:《压电与声光》2006年第6期692-695,共4页Piezoelectrics & Acoustooptics
基 金:国家自然科学基金资助项目(60202008)
摘 要:采用金刚石薄膜作为阴-阳极间绝缘介质层是一种新型的微间隙室(MGC)结构。该文详细介绍和讨论了采用常规的微细加工工艺制备基于金刚石薄膜介质层的MGC的制备技术,其典型结构为阳极微条宽20μm,微条间隔180μm,器件探测区面积为38mm×34mm。采用热丝CVD法制备的金刚石薄膜作为阴-阳极间绝缘介质层,厚7~8μm,具有(100)晶面结构。金刚石的刻蚀采用反应离子刻蚀,Cr作掩膜,O2和SF6为刻蚀气体,刻蚀速率为79nm/min,与Cr的刻蚀比约为20:1。实验结果表明,采用的微加工结合自套准工艺可很好地解决金刚石薄膜的制备、图形化及金属阳极电极与金刚石薄膜的相互套准等金刚石薄膜的可加工性及兼容性问题,并制备出采用金刚石薄膜作为电极间绝缘介质层的新型MGC结构。Micro-gap Gas Chamber (MGC) using diamond film as insulating layer is a novel type of MGC structure. A study of the fabrication of MGC based on diamond film insulating layer using the common micro-manufacture technology is presented. The anode strips of the typical structure is 20 9m wide, the distance between strips is 180 μm wide, and the detecting area is 38 mm×34 mm. The 7-8 μm thick (100) textured diamond film was grown by Hot Filament CVD, and etched by RIE, with Cr as mask and O2/SF6 as etehant. The etch rate is 79 nm/min, and the selectivity ratio is 20 : 1. The results demonstrate that the micro-manufacture and self-register technology can effectively solve the problems of the process ability and compatibility of diamond, such as the fabrication, pattern and the inter-register between the diamond film and metal anode. A novel structure of MGC is fabricated.
分 类 号:TN304[电子电信—物理电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.15