MOCVD和GSMBE生长Ga_（0．5）In_（0．5）P外延层中有序结构的研究  

Ordered Structure in Ga_(0.5)In_(0.5)P Grown by MOCVD and GSMBE

作　　者：董建荣[1] 李晓兵[1] 孙殿照[1] 陆大成[1] 李建平[1] 孔梅影[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学实验室

出　　处：《Journal of Semiconductors》1996年第9期641-645,共5页半导体学报（英文版）

摘　　要：用ＭＯＣＶＤ在（１００）、ＧＳＭＢＥ在（１００）和（１１１）ＢＧａＡｓ上生长了ＧａＩｎＰ外延层．ＰＬ测试表明，（１００）衬底上ＧａＩｎＰＰＬ峰的能量比计算的带隙分别小４３（ＧＳＭＢＥ生长）和１０４ｍｅＶ（ＭＯＣＶＤ生长）．用Ｋｕｒｔｚ等人的模型对ＭＯＣＶＤ和ＧＳＭＢＥ生长的ＧａＩｎＰ中有序度的不同进行了解释．并讨论了衬底晶向对ＧａＩｎＰ中有序程度的影响．Abstract GaxIn1-xP(x≈0.51)epilayers grown on(100)GaAs by MOCVD and on(100)and (111)B by GSMBE were characterized by X-ray diffraction and photoluminescence (PL). The 10K PL spectra show that PL peak energies of GaInP on(100) grown by MOCVD and GSMBE are smaller than the band gaps by 104 and 43 meV, respectively, indicating the ordering in the GaInP.This results are explained on the basis of the model proposed by Kurtz et al..Finally,we also discuss the possibilities of ordering in GaInP on differently oriented GaAs substrates and arrive at the conclusion that the GaInP grown on(111) GaAs is always disordered.

关 键 词：MOCVD GSMBE GaInP层 外延生长 有序结构 

分 类 号：TN304.26[电子电信—物理电子学]