用全扩散法制作MCT  

Complete Diffusion Technology for MCT Fabrication

作　　者：张发生[1] 周如培[1] 周宝霞[1] 陈治明[1] 

机构地区：[1]西安理工大学自动化工程系

出　　处：《Journal of Semiconductors》1996年第9期664-666,共3页半导体学报（英文版）

基　　金：国家"八五"重大攻关项目;国家计委的资助

摘　　要：使用普通Ｐ型硅片，用全扩散工艺制作ＭＣＴ．除开通与关断ＭＯＳ外，全部器件用常规晶闸管工艺制造．试制品主要电特性达到设计要求，说明了利用全扩散工艺制造ＭＣＴ的可行性．文中讨论了适合于全扩散工艺的器件结构设计思路，报道了样品的测试结果，并对试制工作进行了简单分析．Abstract MCT device samples have been successfully fablicated by a complete diffusion technology in P-type silicon wafers. The main part of the fabrication process is compatible with the commonly used technology for thyristor manufactures. The feasibility of the complete diffusion technology is demonstrated by the samples' main characteristics which meets the device ratings designed. Considerations in design of the MCT device structure is discussed in accordance with the complete diffusion technology. A brief analysis on the testing work is reported as well as the measured sample's properties.

关 键 词：全扩散法 MOS控制 晶闸管 硅片 MCT 

分 类 号：TN34[电子电信—物理电子学]