低压化学气相淀积多晶硅薄膜工艺研究  

Research on Polysilicon Thin Film Technics by LPCVD

作　　者：谭刚[1] 吴嘉丽[1] 李仁锋[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《新技术新工艺》2006年第11期34-35,共2页New Technology & New Process

摘　　要：在研制器件过程中,多晶硅制备的工艺条件对其性能影响较大。讨论了低压化学气相淀积(LPCVD)关键材料多晶硅薄膜的基本原理,考察了工作压力、反应温度等对多晶硅薄膜淀积速率的影响,以及影响多晶硅薄膜质量的因素,提出了改进措施,优化了多晶硅制备工艺参数,制备了合格的多晶硅薄膜。The technological conditions of polysilicon preparation has an important effect on the manufacturing process. The principles of polysilicon film as the key material of low pressure chemical vapor deposition (LPCVD ) are introduced. The growth rate of the film is investigated with the variation of deposition parameters,including working voltage and reaction temperature. And the influencing factors on quality of polysilicon film are analyzed. In the paper the modified measures are proposed, preparation technical process are optimized and qualified polysilicon films are prepared.

关 键 词：低压化学气相淀积 多晶硅薄膜 淀积速率 优化 

分 类 号：TG174.444[金属学及工艺—金属表面处理]