高压SOI-LDMOS截止频率研究  

A Study on Cut-Off Frequency of High-Voltage SOI-LDMOS

作　　者：孙伟锋[1] 俞军军[1] 易扬波[1] 陆生礼[1] 

机构地区：[1]东南大学国家ASIC系统工程技术研究中心,江苏南京210096

出　　处：《微电子学》2006年第6期736-739,共4页Microelectronics

基　　金：国家高技术研究发展(863)计划资助项目(2004AA1Z1060);江苏省高等学校研究生创新计划资助项目(XM04-30);东南大学优秀博士学位论文基金资助项目(YBJJ0413)

摘　　要：建立了高压SOI-LDMOS截止频率ft的提取方法,并借助半导体器件专业软件Tsu-prem-4和Medici,对截止频率ft与栅源电压Vgs和漏源电压Vds的关系进行了分析;研究了栅氧化层厚度、漂移区注入剂量、SOI层厚度和场极板长度等四个关键参数对截止频率的影响;最后,提出了提高SOI-LDMOS截止频率的方法。The method to extract cut off frequency of high-voltage SOI-LDMOS has been established. Relationship of cut-off frequency of SOI-LDMOS with the gate-source voltage and the drain-source voltage were analyzed using Tsuprem-4 and Medici. Effects of gate oxide thickness, drift-region implant-dose, SOI thickness and fieldplate length on cut-off frequency were discussed in detail. A method to improve cut-off frequency of SOI-LDMOS was also proposed.

关 键 词：SOI-LDMOS 截止频率 栅氧化层 漂移区 场极板 

分 类 号：TN432[电子电信—微电子学与固体电子学]