Ni/Au与p-GaN的比接触电阻率测量  

Measurement of Ohmic Contact Resistivity Between Ni/Au and p-type GaN

作　　者：卫静婷[1] 冯玉春[1] 李炳乾[2] 杨建文[1] 刘文[1] 王质武[1] 施炜[1] 杨清斗[1] 

机构地区：[1]深圳大学光电子研究所广东省光电子器件与系统重点实验室 [2]佛山科学技术学院物理系,广东佛山528000

出　　处：《液晶与显示》2006年第6期655-659,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：广东省关键领域重点突破项目(No.2B2003A107);深圳市科技计划项目(No.200515);深圳大学省;部重点实验室开放基金项目

摘　　要：通过采用环形传输线方法(CILM),电流-电压(I-V)曲线、表面形貌等方法,研究不同的Ni/Au厚度比和空气气氛下合金退火温度对p型氮化镓欧姆接触特性造成的影响。根据Ni/Au与p型氮化镓欧姆接触的形成机制,采用合适的Ni/Au厚度比及退火温度,得到比接触电阻率(ρc)为1.09×10-5Ω.cm2的Ni/Au-p-GaN电极,并分析了Ni在退火过程中对形成良好的欧姆接触中所起到的作用。The specific contact resistance was characterized by current-voltage （I-V） measurements based on the circular transmission line model （CTLM）. It was investigated by changing the thickness of Ni/Au and the anneal temperature to find influence of the ohmic contact characteristic of p-type GaN annealed under the air ambience. According to the formation of ohmic contact, by using appropriate thickness of Ni/Au and anneal temperature, the little contact resistance of Ni/Au electrode on p-type GaN was achieved and it is 1.09E-5Ω·cm^2. It was also analyzed how the Ni layer affects the forming of better ohmic contact when annealed. Its surface morphology was observed under the atom force microscopy and the constituents of the annealed alloy were detected through scanning electron microscopy.

关 键 词：p型氮化镓 镍/金 比接触电阻率 

分 类 号：TN312.8[电子电信—物理电子学] O472[理学—半导体物理]