亚波长光刻离轴照明和次分辨率辅助图形技术  

Off-Axis Illumination and Sub-Resolution Assistance Feature Technology for Sub-Wavelength Lithography

作　　者：李季[1] 史峥[1] 沈珊瑚[1] 陈晔[1] 

机构地区：[1]浙江大学超大规模集成电路设计研究所,浙江杭州310027

出　　处：《江南大学学报（自然科学版）》2006年第6期679-684,共6页Joural of Jiangnan University (Natural Science Edition)　

基　　金：国家自然科学基金项目(60176015)

摘　　要：讨论了亚波长光刻条件下的离轴照明和次分辨率辅助图形两种分辨率的增强技术,分析了两种技术的原理,利用光刻模拟软件,针对不同线宽的稀疏线条,对添加次分辨率辅助图形前后的光刻仿真结果进行了对比.研究结果表明,离轴照明技术和次分辨率辅助图形的结合使用,可以显著提高亚100纳米级版图线条的光刻分辨率,增大工艺窗口,降低版图成像对生产工艺参数的要求,对于解决亚波长光刻所带来的亚100纳米级集成电路成像质量下降的问题非常必要.Off-axis illumination and sub-resolution assistance feature technologies are described. The principles of these two technologies are analyzed. By using software for lithography simulation, the simulation results of lines with different width and pitch before and after adding SRAF are compared with that without off-axis illumination and sub-resolution assistance feature. The result shows that off-axis illumination and sub-resolution assistance feature can effectively enhance the resolution of sub-100 nanometers graphics, enlarge the process window, reduce the requirement of process parameters for lithography projection, and therefore, are very necessary for solving the problem of projection quality reduction for sub-100 nanometers integrated circuit, brought by ＂Sub-wavelength Lithography＂.

关 键 词：离轴照明 次分辨率辅助图形 分辨率增强技术 光刻模拟 

分 类 号：TN305.7[电子电信—物理电子学]