Ar^+刻蚀对InGaAs,n-InP和p-InP表面损伤及消除  

Surface Damage and Removal of Ar^+ Etched InGaAs, n-InP and p-InP

作　　者：吕衍秋[1] 越方禹[1] 洪学鹍 陈江峰[1] 韩冰[1] 吴小利[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《Journal of Semiconductors》2007年第1期122-126,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:50632060)~~

摘　　要：研究了Ar+刻蚀对InGaAs,n-InP和p-InP表面的损伤,并用湿法腐蚀后处理消除损伤.Ar+刻蚀后InGaAs表面均方根粗糙度较小,而n-InP和p-InP表面明显变粗糙.刻蚀后InGaAsPL强度增加,而n-InP和p-InPPL强度都减小.用XPS分析了未刻蚀、Ar+刻蚀和湿法腐蚀后处理三种情况下样品表面原子含量.刻蚀后InGaAs表面In和Ga含量明显增加,n-InP和p-InP表面有严重P缺失.湿法腐蚀后,样品表面原子含量和未刻蚀前基本一致.Surface damage on InGaAs, n-InP, and p-InP after Ar^＋ etching is studied, and it is removed by wet etching post treatments. After Ar^＋ etching, the root-mean-square roughness of InGaAs surface is lower, but the roughness of n-InP and p-InP surfaces is significantly higher. The photoluminescence （PL） intensity of Ar^＋ -etched InGaAs increases, but those of Ar^＋ - etched n-InP and p-InP decreases. X-ray photoelectron spectroscopy （XPS） is used to investigate the atomic concentration of three samples before Ar^＋ etching and after Ar^＋ etching and wet etching post treatments. After Ar^＋ etching,the content of In and Ga at the InGaAs surface increases markedly, and there is generally a preferential loss of P from n-InP and p-InP surfaces. The surface atomic concentration of the samples after wet etching is almost the same as before Ar^＋ etching.

关 键 词：Ar^+刻蚀 INGAAS INP 湿法腐蚀 表面损伤 

分 类 号：TN304[电子电信—物理电子学]