射频磁控溅射制备声表面波器件用ZnO薄膜  

Effects of Sputtering Conditions on Properties of ZnO Films Prepared by RF Magnetron Sputtering for SAW Applications

作　　者：郑泽渔[1] 张树人[1] 杨成韬[1] 钟朝位[1] 董加和[1] 孙明霞[1] 刘敬松[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《压电与声光》2007年第1期83-86,共4页Piezoelectrics & Acoustooptics

摘　　要：研究了采用射频磁控溅射法在SiO2/Si衬底上制备ZnO薄膜工艺中溅射功率、氧氩比(V(O2)/V(Ar))及衬底温度对ZnO薄膜结构的影响。利用X-射线衍射(XRD)和扫描力显微镜(AFM)对薄膜进行结构性能分析,表明其结构性能随工艺参数变化的规律。利用优化的工艺条件:射频功率60 W、V(O2)/V(Ar)为0.55和衬底温度350℃,在DLC/Si衬底上制备了ZnO薄膜,制作加工成声表面波滤波器件,测试分析了频率响应特性,中心频率为596.5 MHz。This study investigated the microstructure of ZnO films deposited on SiO2/Si substrate with different sputtering conditions of RF power, V（O2 ）/V（Ar） ratio and substrate temperature. ZnO films were prepared on DLC/Si substrate under the optimized parameters such as the RF power of 60 W, V（O2 ）/V（Ar） ratio of 0.55 and substrate temperature of 350℃. Finally, interdigital transducers were fabricated on the films to measure the characteristics of the SAW device, and the frequency response was analyzed. The center frequency was measured at about 596.5 MHz.

关 键 词：射频磁控溅射 氧化锌薄膜 射频功率 氧氩比(V(O2)/V(Ar)) 衬底温度 声表面波器件 

分 类 号：O484.1[理学—固体物理]